高电子迁移率晶体管
单片微波集成电路
带宽扩展
带宽(计算)
噪声系数
放大器
电气工程
炸薯条
低噪声放大器
晶体管
电子工程
光电子学
CMOS芯片
计算机科学
材料科学
工程类
电信
电压
数字信号处理
音频信号
作者
Xiaojie Zhang,Kuisong Wang,Yuepeng Yan,Xiaoxin Liang
标识
DOI:10.1109/lmwt.2023.3341145
摘要
This letter presents a three-stage current-reuse (CR) low-noise amplifier (LNA) monolithic microwave-integrated circuit (MMIC) design for broadband applications. The proposed LNA employs virtual ground and resistive feedback to achieve bandwidth extension and low noise. With the proposed techniques, the LNA is fabricated using a 0.15- $\mu$ m E-mode GaAs pseudomorphic high-electron-mobility transistor (pHEMT) process. The measurement results show a peak gain of 27.1 dB with a 3-dB bandwidth of 6–24 GHz and a dc power consumption of 130 mW. The noise figure (NF) of 0.71–1.9 dB, 9.2–12.6 dBm OP1dB, and 20–23.5 dBm OIP3 are achieved. The fabricated LNA, including the testing pads, has a chip size of 1.3 $\times$ 0.8 mm.
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