Study of effects of varying parameters on the dislocation density in 200 mm SiC bulk growth

Physical vapor transport (PVT) is the dominant method for growing 200 mm SiC crystals, and the crystals produced by this method still have dislocations, which affect the performance of the device. In this study, the finite element analysis of 200 mm SiC crystal growth has been conducted to investigate the influencing parameters on the dislocation density. The calculations are based on the model of multiple resistance heating. The transient heat transfer for the crystal growth is first calculated. A dynamic mesh technique is then employed to consider the shape evolution of the crystal during the growth. Finally, the distributions of the internal stress and dislocation density have been calculated based on the Alexander-Haasen model. The comparison among different parameters provides guidance for reducing the thermal stress and dislocation density in the 200 mm SiC crystal growth.