Study on the effect of sputtering pressure on the physical properties of InN films on ITO substrate and the dependence of carrier transport characteristics of Li-doped p-NiO/n-InN heterojunction on the environmental temperature

The exceptional performance of ITO substrate has made it possible to use indium nitride (InN) material in a variety of applications. The combination of lithium-doped NiO and n-type InN in a heterojunction shows great potential as a material for optoelectronic devices. This study investigates the influence of sputtering pressure on the crystal structure, surface morphology, optical properties, and electrical characteristics of InN thin films prepared on ITO substrates through magnetron sputtering. The research findings indicate that the InN films grow preferentially along the (002) crystal plane, with the best crystalline quality observed under a sputtering pressure of 1.5 Pa. Subsequently, the changes in the optical bandgap, transmittance, and reflectance of the InN films with varying sputtering pressure were discussed. The study also discusses a comprehensive analysis of the trends in the electrical characteristics of the InN films with sputtering pressure and environmental temperature, demonstrating their excellent thermal stability at high temperatures. Additionally, Li-doped p-NiO/n-InN heterojunction devices were fabricated and analyzed to determine the influence of environmental temperature on the carrier transport characteristics of the devices, revealing their favorable electrical properties at different temperatures. This research enriches the field of InN material studies and opens up new prospects for the performance and practical applications of InN optoelectronic devices.