自旋电子学
兴奋剂
材料科学
基质(水族馆)
原子轨道
凝聚态物理
各向异性
单层
Atom(片上系统)
垂直的
磁各向异性
纳米技术
磁化
光电子学
铁磁性
磁场
物理
光学
电子
计算机科学
海洋学
几何学
数学
量子力学
地质学
嵌入式系统
作者
Fei Guo,YM Xie,Xiaoqi Huang,Feng Li,Baosheng Liu,Xiaopeng Dong,Jin Zhou
标识
DOI:10.1088/1361-6463/ad1cbf
摘要
Abstract This study proposes a novel approach to enhanced the perpendicular magnetic anisotropy (PMA) of Fe adsorbed on a MoSi2N4 substrate through hole doping. First principles calculations are employed to investigate the PMA of freestanding Fe and Fe/MoSi2N4 complex system. It is found that the PMA of Fe atom slightly increases from freestanding Fe monolayer to the Fe/MoSi2N4 system, which is attributed to the overlap between Fe-3d and N-2p orbitals. More interestingly, it is found that the PMA of Fe atoms in Fe/MoSi2N4 can be further enhanced by hole doping, which enables the PMA to increase significantly, up to four times the original value. This finding provides a promising way to enhance the PMA in two-dimensional spintronic devices. These results offering potential applications in developing advanced Two-dimensional (2D) spintronic devices.
科研通智能强力驱动
Strongly Powered by AbleSci AI