材料科学
扫描透射电子显微镜
纳米技术
电子能量损失谱
异质结
低能电子显微镜
自旋电子学
光谱学
过渡金属
电子断层摄影术
透射电子显微镜
电子显微镜
光电子学
催化作用
化学
光学
物理
凝聚态物理
铁磁性
生物化学
量子力学
作者
Ruichun Luo,Meng Gao,Chunwen Wang,Juntong Zhu,Roger Guzmán,Wu Zhou
标识
DOI:10.1002/adfm.202307625
摘要
Abstract 2D transition metal dichalcogenides (TMDs) exhibit remarkable properties that are strongly influenced by their atomic structures, as well as by various types of defects and interfaces that can be precisely engineered and controlled. These features make 2D TMDs and TMD‐based materials highly promising for a wide range of applications in electronics, optoelectronics, magnetism, spintronics, catalysis, energy, etc. By providing a comprehensive approach to understand the structure–property–functionality relationship in materials at the atomic scale, electron microscopy, and spectroscopy techniques have emerged as invaluable tools for studying both the static characteristics and dynamic evolutions of 2D TMDs. In this review, the primary focus lies in exploring intrinsic and artificial structures in TMDs and their heterostructures, along with their corresponding properties, through cutting‐edge aberration‐corrected scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS). Additionally, recent advancements in the field of in situ visualization and manipulation of 2D TMDs using electron beams are highlighted. It is anticipated that the up‐to‐date overview provided, along with a glimpse into the future development of STEM‐based techniques, will make a substantial contribution to advancing research on 2D materials.
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