38.1: Invited Paper: Research progress of high‐performance Metal Oxide for Micro‐LED

In this work, high‐mobility oxide backing‐plate with pulse‐hybrid‐modulation (PHM) driving circuit has been well applied in CSOT G4.5 production line. The self‐aligned top‐gate (SATG) thin film transistor (TFT) exhibits linear mobility over 30 cm 2 V ‐1 s ‐1 , excellent V th uniformity 0.3±0.2V and PBTS/NBTIS <1.5 V/h. The PHM driving circuit significantly improves the low‐gray uniformity and the color gamut shift of Micro‐LED (MLED) under low‐current density. In addition, a 19 inch spliced MLED panel has been demonstrated, in which color gamut >120% NTSC, pixel pitch 0.4 mm, contrast ratio >1000000:1, invisible border and splicer.