热重分析
材料科学
化学气相沉积
钼
原子层沉积
X射线光电子能谱
拉曼光谱
挥发
氮化物
分析化学(期刊)
薄膜
化学工程
纳米技术
图层(电子)
化学
有机化学
冶金
工程类
物理
光学
作者
Thomas E. Shaw,Zahra Ali,Taylor M. Currie,S. Novia Berriel,Brian Butkus,J. Tyler Wagner,Konstantin Preradovic,Glenn P. A. Yap,Jennifer C. Green,Parag Banerjee,Alfred P. Sattelberger,Lisa McElwee‐White,Titel Jurca
标识
DOI:10.1021/acsami.3c04074
摘要
The synthesis, characterization, and thermogravimetric analysis of tris(N,N'-di-isopropylacetamidinate)molybdenum(III), Mo(iPr-AMD)3, are reported. Mo(iPr-AMD)3 is a rare example of a homoleptic mononuclear complex of molybdenum(III) and fills a longstanding gap in the literature of transition metal(III) trisamidinate complexes. Thermogravimetric analysis (TGA) reveals excellent volatilization at elevated temperatures, pointing to potential applications as a vapor phase precursor for higher temperature atomic layer deposition (ALD), or chemical vapor deposition (CVD) growth of Mo-based materials. The measured TGA temperature window was 200-314 °C for samples in the 3-20 mg range. To validate the utility of Mo(iPr-AMD)3, we demonstrate aerosol-assisted CVD growth of MoO3 from benzonitrile solutions of Mo(iPr-AMD)3 at 500 °C using compressed air as the carrier gas. The resulting films are characterized by X-ray photoelectron spectroscopy, X-ray diffraction, and Raman spectroscopy. We further demonstrate the potential for ALD growth at 200 °C with a Mo(iPr-AMD)3/Ar purge/300 W O2 plasma/Ar purge sequence, yielding ultrathin films which retain a nitride/oxynitride component. Our results highlight the broad scope utility and potential of Mo(iPr-AMD)3 as a stable, high-temperature precursor for both CVD and ALD processes.
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