钝化
材料科学
钙钛矿(结构)
结晶度
能量转换效率
非阻塞I/O
卤化物
化学工程
光电子学
纳米技术
复合材料
无机化学
催化作用
图层(电子)
有机化学
化学
工程类
作者
Yu Li,Zedong Lin,Jian Wang,Rongguo Xu,Kai Zhang,Gaopeng Wang,Tongfa Liu,Huanping Zhou,Shuang Xiao,Shihe Yang
标识
DOI:10.1002/adfm.202203995
摘要
Abstract Post‐treatment is a widely used strategy to reduce defects in perovskite films, but has been largely limited to the solution phase. Herein, the posttreatment tool kit and develop a universal amine salts (A I X I ) vapor healing strategy by taking advantage of the penetrating power of vapor and the soft‐matter characteristics of halide perovskite is expanded. In a striking demonstration, the post‐treatment of pristine perovskite layers allows simultaneous filling of the MA + and I – vacancies, passivation of both the cation and anion defects, and healing of the films to high order and high crystallinity required for high device performance, from the surface to the bulk and all the way down to the bottom. Experiments and DFT calculations revealed that charge extraction can be enhanced and non‐radiative recombination can be reduced by regulating the energy levels and reducing the trap states via the A I X I vapor healing. Moreover, the diffusing A I X I can reach the NiO x surface to obstruct the undesirable interfacial reactions and passivate the interface defects, further reducing the open‐circuit voltage ( V oc ) loss. The vapor healing strategy substantially reduces the trap density from 4.76 × 10 15 to 1.04 × 10 15 cm –3 , and promots power conversion efficiency of the champion device from 17.92% to 20.48% with superior device consistency, V oc up to 1.114 V and the operational device stability.
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