光开关
插入损耗
绝缘体上的硅
交叉开关
材料科学
波分复用
光电子学
宽带
炸薯条
光学
光交叉连接
波导管
光纤
波长
电信
物理
计算机科学
硅
作者
Wei Gao,Xin Li,Liangjun Lu,Chenghan Liu,Jianping Chen,Linjie Zhou
标识
DOI:10.1002/lpor.202300275
摘要
Abstract Large‐scale silicon optical switches are essential to support the ever‐increasing data traffic. Among the various switching architectures, the well‐known switch‐and‐select (S&S) architecture has the advantages of low crosstalk and strict non‐blocking. However, it suffers from high path‐dependent losses as the waveguide crossings increase dramatically with the number of ports. In this paper, a large‐scale 32 × 32 S&S optical switch on a multi‐layer Si 3 N 4 ‐on‐SOI platform is reported. The optical switch chip incorporates 1984 broadband thermo‐optic Mach‐Zehnder interferometer (MZI)‐based switch elements, 246 016 three‐dimensional (3D) waveguide crossings, and 2048 interlayer couplers. Both ≈1‐mdB‐loss 3D waveguide crossings and ≈0.3‐dB‐loss interlayer couplers are realized, significantly reducing the overall insertion loss and footprint of the switch chip. The measured average fiber‐to‐fiber insertion loss is 12.88 dB at the 1580 nm wavelength. In addition, the crosstalk is less than −20.7 dB over the 110‐nm wavelength range. The power consumption of the entire switch chip is only ≈0.98 W due to the air trenches and substrate undercut. High‐fidelity optical transmission of a 50 Gb s −1 quadrature phase‐shift keying signal verifies the high‐performance routing capability of this chip. These results indicate that the large‐scale optical switch with broadband, low crosstalk, and high‐power efficiency is promising for datacenter optical network applications.
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