铁电性
材料科学
兴奋剂
外延
正交晶系
矫顽力
成核
极化(电化学)
凝聚态物理
薄膜
单斜晶系
光电子学
纳米技术
电介质
结晶学
晶体结构
图层(电子)
物理化学
化学
物理
有机化学
作者
Alexandre Silva,Ignasi Fina,F. Sánchez,José Silva,L. Marques,Veniero Lenzi
标识
DOI:10.1016/j.mtphys.2023.101064
摘要
Epitaxial orthorhombic phase La doped HfO2 films are promising for achieving robust ferroelectric polarization without wake-up effect. However, lowering the coercive field is crucial for achieving low-power memory devices. In this work, we have investigated the influence of the La content effect on the structural and ferroelectric properties of epitaxial HfO2 thin films. We show that while the remanent polarization is optimum for 2–5 at. % La-doped HfO2 films, the coercive field is decreased with La doping. The experimental work is supported by density functional theory (DFT) calculations which show that the polarization switching in epitaxial La:HfO2 films can be understood based on the synergetic contribution of the presence of a non-ferroelectric monoclinic phase and the La doping itself that causes a reduction of the nucleation and DW motion energy barriers for the crossing path, which makes it more probable than the non-crossing one.
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