材料科学
纳米片
纳米复合材料
复合材料
电介质
复合数
聚合物
图层(电子)
聚合物纳米复合材料
纳米技术
光电子学
作者
Ahrom Ryu,Haena Yim,Soyeon Yoo,Jiseul Park,Dong‐Gyu Lee,Jeong Yong Lee,Hyun‐Cheol Song,Seung‐Hyub Baek,Dae‐Su Kim,Ji‐Won Choi
出处
期刊:Small
[Wiley]
日期:2023-04-03
卷期号:19 (28)
被引量:4
标识
DOI:10.1002/smll.202300526
摘要
Polymer-based nanocomposites are desirable materials for next-generation dielectric capacitors. 2D dielectric nanosheets have received significant attention as a filler. However, randomly spreading the 2D filler causes residual stresses and agglomerated defect sites in the polymer matrix, which leads to the growth of an electric tree, resulting in a more premature breakdown than expected. Therefore, realizing a well-aligned 2D nanosheet layer with a small amount is a key challenge; it can inhibit the growth of conduction paths without degrading the performance of the material. Here, an ultrathin Sr1.8 Bi0.2 Nb3 O10 (SBNO) nanosheet filler is added as a layer into poly(vinylidene fluoride) (PVDF) films via the Langmuir-Blodgett method. The structural properties, breakdown strength, and energy storage capacity of a PVDF and multilayer PVDF/SBNO/PVDF composites as a function of the thickness-controlled SBNO layer are examined. The seven-layered (only 14 nm) SBNO nanosheets thin film can sufficiently prevent the electrical path in the PVDF/SBNO/PVDF composite and shows a high energy density of 12.8 J cm-3 at 508 MV m-1 , which is significantly higher than that of the bare PVDF film (9.2 J cm-3 at 439 MV m-1 ). At present, this composite has the highest energy density among the polymer-based nanocomposites under the filler of thin thickness.
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