材料科学
纳米技术
原子单位
比例(比率)
光电子学
工程物理
物理
量子力学
作者
Gyeong Hee Ryu,Gang Seob Jung,Jamie H. Warner
出处
期刊:ACS Nano
[American Chemical Society]
日期:2024-11-18
卷期号:18 (48): 33152-33158
标识
DOI:10.1021/acsnano.4c11656
摘要
Nanowires composed of a 1:1 stoichiometry of transition metals and chalcogen ions can be fabricated from two-dimensional transition metal dichalcogenides (TMDs) by using electron beam irradiation. Wires fabricated through in situ experiments can be geometrically connected to TMD sheets in various ways, and their physical properties can vary accordingly. Understanding the structural transformation caused by electron beams is critical for designing wire-sheet structures for nanoelectronics. In this study, we report the behavior of nanowires formed inside a monolayer MoS
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