材料科学
非阻塞I/O
串联
钙钛矿(结构)
硅
萃取(化学)
光电子学
工程物理
化学工程
复合材料
催化作用
生物化学
化学
色谱法
工程类
作者
Yongbin Jin,Huiping Feng,Yingji Li,Hong Zhang,Xuelin Chen,Yawen Zhong,Qinghua Zeng,Jiarong Huang,Yalian Weng,Jinxin Yang,Chengbo Tian,Qian Zhang,Liqiang Xie,Zhanhua Wei
标识
DOI:10.1002/aenm.202403911
摘要
Abstract Sputtering nickel oxide (NiO x ) is a production‐line‐compatible route for depositing hole transport layers (HTL) in perovskite/silicon tandem solar cells. However, this technique often results in films with low crystallinity and structural flaws, which can impair electronic conductivity. Additionally, the complex surface chemistry and inadequate Ni 3+ /Ni 2+ ratio impede the effective binding of self‐assembled monolayers (SAMs), affecting hole extraction at the perovskite/HTL interface. Herein, these issues are addressed using a recrystallization strategy by treating sputtered NiO x thin films with sodium periodate (NaIO 4 ), an industrially available oxidant. This treatment improved crystallinity and increased the Ni 3+ /Ni 2+ ratio, resulting in a higher content of nickel oxyhydroxide. These enhancements strengthened the SAM's anchoring capability on NiO x and improved the hole extraction at the perovskite/HTL interface. Moreover, the NaIO 4 treatment facilitated Na + diffusion within the perovskite layer and minimized phase separation, thus improving device stability. As a result, single‐junction perovskite solar cells with a 1.68 eV bandgap achieve a power conversion efficiency (PCE) of 23.22% for an area of 0.12 cm 2 . Perovskite/silicon tandem cells with an area of 1 cm 2 reached a PCE of 30.48%. Encapsulated tandem devices retained 95% of their initial PCE after 300 h of maximum power point tracking under 1‐sun illumination at 25 °C.
科研通智能强力驱动
Strongly Powered by AbleSci AI