材料科学
光电子学
兴奋剂
瞬态(计算机编程)
瞬态响应
异质结
双极结晶体管
碳纤维
异质结双极晶体管
硅锗
晶体管
硅
电气工程
电压
计算机科学
复合材料
工程类
操作系统
复合数
作者
Adrian Ildefonso,Joel M. Hales,Ani Khachatrian,Jeffrey W. Teng,George N. Tzintzarov,Delgermaa Nergui,Brett L. Ringel,Uppili S. Raghunathan,Vibhor Jain,John D. Cressler,Dale McMorrow
出处
期刊:IEEE Transactions on Nuclear Science
[Institute of Electrical and Electronics Engineers]
日期:2023-08-01
卷期号:70 (8): 1797-1804
标识
DOI:10.1109/tns.2023.3255169
摘要
The impact of carbon doping on the single-event transient (SET) response of SiGe heterojunction bipolar transistors (HBTs) was evaluated using pulsed-laser charge generation via two-photon absorption (TPA). Special device structures with different amounts of carbon were fabricated by GlobalFoundries and characterized. Despite the fact that carbon is known to introduce bulk traps in the SiGe film, experimental results show no measurable difference in the SET response of SiGe HBTs fabricated with different amounts of carbon. Technology computer-aided design (TCAD) simulations showed that the amount of carbon required to observe changes in the SET response would significantly impair the electrical performance of the device. Thus, within practical limits, carbon has no impact on the SET response of SiGe HBTs.
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