BEOL-compatible Ta/HZO/W Ferroelectric Tunnel Junction with Low Operating Voltage Targeting for Low Power Application

HfO 2 -based metal-ferroelectric-metal (MFM) ferroelectric tunnel junction (FTJ) with the low operating voltage (± 1.5 V) has been fabricated by simple process steps with a low thermal budget (≤ 450 °C). It enables a better read current level and a lower operating voltage compared with its metal-ferroelectric-insulator-semiconductor (MFIS) competitors, which means a reduction in the power consumption on the premise of readability. Moreover, long retention and acceptable endurance for non-volatile memory are demonstrated. With these advantages, our device shows great potential for monolithic 3D integration with the CMOS circuits in low-power storage or in-memory computing applications.