材料科学
杂质
钻石
硅
增长率
单晶
光电子学
结晶学
冶金
几何学
化学
数学
有机化学
作者
Lin Wang,Xian-Yi Lv,Qiliang Wang,Liuan Li,Guangtian Zou
标识
DOI:10.1016/j.mssp.2024.108554
摘要
In this paper, we systematically investigate the influence of growth rate on the incorporation of silicon in single crystal diamond. The intensity of SiV− center is significantly enhanced with the increase of methane flow rate. By analyzing the optical emission spectrum and photoluminescence spectrum of samples grown with different methane concentrations, the enhancement of SiV− intensity is not associated with the Si–C concentration in the precursor but with the higher growth rate. In addition, an increased oxygen flow rate significantly decreases the intensity of SiV− center, which is attributed to the formation of insoluble silicon oxide as well as the relatively lower growth rate. Finally, we propose a growth model to explain the effect of growth rate on the incorporation of silicon impurity.
科研通智能强力驱动
Strongly Powered by AbleSci AI