材料科学
可伸缩电子设备
光电子学
柔性电子器件
薄脆饼
数码产品
基质(水族馆)
弹性体
薄膜晶体管
纳米技术
复合材料
电气工程
海洋学
地质学
工程类
图层(电子)
作者
Yingtao Zhao,Sanchuan Zhao,Xixi Pang,Anni Zhang,Chenning Li,Lin Yuxuan,Xiaomeng Du,Lei Cui,Zhenhua Yang,Tailang Hao,Chaopeng Wang,Jun Yin,Wei Xie,Jian Zhu
出处
期刊:Science Advances
[American Association for the Advancement of Science (AAAS)]
日期:2024-04-05
卷期号:10 (14)
被引量:2
标识
DOI:10.1126/sciadv.adm9322
摘要
Flexible and stretchable thin-film transistors (TFTs) are crucial in skin-like electronics for wearable and implantable applications. Such electronics are usually constrained in performance owing to a lack of high-mobility and stretchable semiconducting channels. Tellurium, a rising semiconductor with superior charge carrier mobilities, has been limited by its intrinsic brittleness and anisotropy. Here, we achieve highly oriented arrays of tellurium nanowires (TeNWs) on various substrates with wafer-scale scalability by a facile lock-and-shear strategy. Such an assembly approach mimics the alignment process of the trailing tentacles of a swimming jellyfish. We further apply these TeNW arrays in high-mobility TFTs and logic gates with improved flexibility and stretchability. More specifically, mobilities over 100 square centimeters per volt per second and on/off ratios of ~10 4 are achieved in TeNW-TFTs. The TeNW-TFTs on polyethylene terephthalate can sustain an omnidirectional bending strain of 1.3% for more than 1000 cycles. Furthermore, TeNW-TFTs on an elastomeric substrate can withstand a unidirectional strain of 40% with no performance degradation.
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