神经形态工程学
材料科学
CMOS芯片
铁电性
纳米技术
计算机体系结构
计算机科学
光电子学
人工神经网络
人工智能
电介质
作者
Dahye Kim,Jihyung Kim,Seokyeon Yun,Jungwoo Lee,Euncho Seo,Sungjun Kim
出处
期刊:Nanoscale
[The Royal Society of Chemistry]
日期:2023-01-01
卷期号:15 (18): 8366-8376
被引量:8
摘要
The hafnium oxide-based ferroelectric tunnel junction (FTJ) has been actively researched because of desirable advantages such as low power and CMOS compatibility to operate as a memristor.
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