线性
宽带
CMOS芯片
带宽(计算)
电子工程
噪声系数
谐波
计算机科学
电气工程
相位噪声
拓扑(电路)
工程类
放大器
电信
电压
作者
Hossein Razavi,Behzad Razavi
出处
期刊:IEEE Journal of Solid-state Circuits
[Institute of Electrical and Electronics Engineers]
日期:2022-09-01
卷期号:57 (9): 2640-2657
被引量:6
标识
DOI:10.1109/jssc.2022.3146080
摘要
A wideband RF receiver employs a multi-loop architecture to ease the tradeoff between noise and linearity, a new method of harmonic rejection that relaxes gain and phase matching requirements, and a new op amp topology to achieve a wide bandwidth with low power consumption. Furthermore, multiple techniques are introduced to improve the out-of-band and in-band linearity, input matching, and stability. Fabricated in 28-nm CMOS technology, the prototype accommodates channel bandwidths from 200 kHz to 160 MHz and exhibits a noise figure of 2.1–4.42 dB while drawing 23–49 mW. It demonstrates an out-of-band IIP3 of 2.8–9.8 dBm and provides more than 60 dB of rejection for blockers at the third and fifth harmonics of the LO.
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