氧化铟锡
材料科学
锡
敏化
氧化物
氧化锡
粘附
氢氧化物
铟
基质(水族馆)
蚀刻(微加工)
接触电阻
金属
化学工程
纳米技术
光电子学
复合材料
无机化学
图层(电子)
冶金
化学
免疫学
工程类
地质学
海洋学
生物
作者
April M. Jeffries,Zijian Wang,R. L. Opila,Mariana I. Bertoni
标识
DOI:10.1016/j.apsusc.2022.152916
摘要
Adhesion of electrical contacts on electronic and optoelectronic devices is important for reliable device operation. Sn-sensitization is a widely used process that improves uniformity and adhesion of plated metals to glass and polymer surfaces. Electrically conductive substrates can significantly benefit from improved uniformity, adhesion, and contact resistance to metallic contact layers. In this study, we investigate the process of Sn-sensitization and Ag-activation on indium tin oxide (ITO) surfaces—a dominant transparent conducting oxide used in optoelectronic devices. Our results show that ITO films exposed to Sn-sensitization solutions with HCl concentrations below 10 mM effectively modify the surface termination through the process of Sn-sensitization (Sn-bonding at the surface hydroxide sites) without etching the ITO film. However, the subsequent Ag-activation on an ITO surface does not seem to follow the typical response on a glass substrate, suggesting that Ag-activation of an ITO surface is likely limited by the Ag ion size relative to the area density of surface hydroxide sensitization sites.
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