Recent Progress of Solution‐Processed Copper‐based p‐Channel Thin‐Film Transistors

Abstract The development of well‐performing p‐type semiconductors is essential in pushing transparent electronics to the next frontier. Copper oxide (Cu x O) is a potentially attractive hole‐transport material for such applications because of its native p‐type semi‐conductivity, abundant availability, non‐toxic nature, and low production cost. Solution‐based processing methods offer many other advantages for the fabrication of metal oxides, including a high level of control over stoichiometry, microstructure, and morphology development, as well as tremendous flexibility in terms of materials and end‐use architectures. This review will cover the current progress of synthesis and deposition of solution‐based Cu x O thin films for the purpose of thin‐film transistors (TFTs). It will show the rapidly growing effort in this field to utilize low‐temperature methods, nanoscale patterning, and green synthesis. Additionally, the emerging solution‐processed TFTs made of nonoxide copper‐based semiconductors such as halide and (pseudo) halide materials will be discussed.