拓扑绝缘体
单层
Berry连接和曲率
拓扑(电路)
带隙
材料科学
量子
基质(水族馆)
半导体
凝聚态物理
纳米技术
物理
光电子学
量子力学
数学
海洋学
组合数学
地质学
作者
Yong-Hu Wang,Shuang-Ying Lei,Neng Wan,Feng Xu,Hong Yu,Cuiyu Li,Jie Chen
标识
DOI:10.1021/acs.jpclett.1c03578
摘要
Two-dimensional (2D) topological insulators (TIs) have recently attracted a great deal of attention due to their nondissipation electron transmission, stable performance, and easy device integration. However, a primary obstacle to influencing 2D TIs is the small bandgap, which limits their room-temperature applications. Here, we adopted first-principles to predict inversion-asymmetric group IV monolayers, PbSn(C2H)2 and PbSn(CH3)2, to be quantum spin Hall (QSH) insulators with large topological gaps of 0.586 and 0.481 eV, respectively. The nontrivial band topologies, which can survive in a wide range of strain, are characterized by topological invariants Z2, gapless edge states, and the Berry curvature. Another intriguing characteristic is the significant Rashba SOC effect which can also be tuned by feasible compressive and tensile strains. Meanwhile, the hexagonal boron nitride (h-BN) provides a suitable substrate for growth of these films without influencing their topological phases. These novel materials are expected to accelerate the development of advanced quantum devices.
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