P‐24: A Novel Method to Improve the LTPS Devices on Flexible Substrate by Off‐state Bias Stress

This paper reports the effect of off‐state stress on the LTPS TFTs on plastic substrates. In this study, by giving LTPS devices off‐state bias stress one millisecond, it could get an excellent off‐state current from 50 pA to 2pA when device operate at VGS=+7V, VDS=‐5.1V. This could be attributed to electron trapping occur in gate insulator could reduce off‐state electric field near to drain region.