光电流
钙钛矿(结构)
材料科学
钝化
光电子学
重组
电阻式触摸屏
太阳能电池
表面光电压
电阻抗
光伏系统
开路电压
不透明度
电压
光学
化学
纳米技术
物理
电气工程
工程类
基因
量子力学
生物化学
图层(电子)
光谱学
结晶学
作者
Isaac Zarazúa,Guifang Han,Pablo P. Boix,Subodh G. Mhaisalkar,Francisco Fabregat‐Santiago,Iván Mora‐Seró,Juan Bisquert,Germà Garcia‐Belmonte
标识
DOI:10.1021/acs.jpclett.6b02193
摘要
The large diffusion lengths recurrently measured in perovskite single crystals and films signal small bulk nonradiative recombination flux and locate the dominant carrier recombination processes at the outer interfaces. Surface recombination largely determines the photovoltaic performance, governing reductions under short-circuit current and open-circuit voltage. Quantification of recombination losses is necessary to reach full understanding of the solar cell operating principles. Complete impedance model is given, which connects capacitive and resistive processes to the electronic kinetics at the interfaces. Carrier collection losses affecting the photocurrent have been determined to equal 1%. Photovoltage loss is linked to the decrease in surface hole density, producing 0.3 V reduction with respect to the ideal radiative limit. Our approach enables a comparison among different structures, morphologies, and processing strategies of passivation and buffer layers.
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