CMOS-compatible multiple-wavelength oscillator for on-chip optical interconnects

光电子学 硅光子学 材料科学 带宽(计算) 谐振器 CMOS芯片 光子学 炸薯条 波分复用 波长 计算机科学 电信
作者
Jacob S. Levy,Alexander Gondarenko,Mark A. Foster,Amy C. Turner-Foster,Alexander L. Gaeta,Michal Lipson
出处
期刊:Nature Photonics [Nature Portfolio]
卷期号:4 (1): 37-40 被引量:1073
标识
DOI:10.1038/nphoton.2009.259
摘要

Silicon photonics enables the fabrication of on-chip, ultrahigh-bandwidth optical networks that are critical for the future of microelectronics1,2,3. Several optical components necessary for implementing a wavelength division multiplexing network have been demonstrated in silicon. However, a fully integrated multiple-wavelength source capable of driving such a network has not yet been realized. Optical amplification, a necessary component for lasing, has been achieved on-chip through stimulated Raman scattering4,5, parametric mixing6 and by silicon nanocrystals7 or nanopatterned silicon8. Losses in most of these structures have prevented oscillation. Raman oscillators have been demonstrated9,10,11, but with a narrow gain bandwidth that is insufficient for wavelength division multiplexing. Here, we demonstrate the first monolithically integrated CMOS-compatible source by creating an optical parametric oscillator formed by a silicon nitride ring resonator on silicon. The device can generate more than 100 new wavelengths with operating powers below 50 mW. This source can form the backbone of a high-bandwidth optical network on a microelectronic chip. A monolithically integrated CMOS-compatible source is demonstrated using an optical parametric oscillator based on a silicon nitride ring resonator on silicon. Generating more than 100 wavelengths simultaneously and operating at powers below 50 mW, scientists say that it may form the basis of an on-chip high-bandwidth optical network.
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