腐蚀坑密度
材料科学
蚀刻(微加工)
表面光洁度
偏压
表面粗糙度
形态学(生物学)
兴奋剂
均方根
电解质
光电子学
电压
分析化学(期刊)
纳米技术
复合材料
电极
化学
图层(电子)
电气工程
物理化学
工程类
色谱法
生物
遗传学
出处
期刊:Journal of vacuum science & technology
[American Vacuum Society]
日期:2004-07-01
卷期号:22 (4): 1750-1754
被引量:27
摘要
The dependence of the etch rate and etch morphology on photoelectrochemical (PEC) process conditions is reported. Considerable control over the etch rate and surface roughness can be exerted through selection of the electrolyte concentration, illumination intensity, as well as through the use of bias voltage applied during the PEC etch process. The etch rate for n-type GaN was dramatically enhanced from 10 to 32 nm/min by the application of +2 V bias during PEC etching. In addition, the surface morphology can be controlled by applying a bias voltage; smooth etched surfaces with root-mean-square (rms) roughness of 0.5 nm have been obtained with bias of +0.65 V, comparable to as-grown surfaces, compared to a rms roughness of 8 nm when no bias is applied. The use of reverse bias voltages was found to suppress PEC etching and produce rough surfaces. The etch rate and morphology have been found to depend on the n-type GaN doping density, with highly doped material resulting in slower etch rates and rougher surfaces than for lightly doped material under the same etch conditions.
科研通智能强力驱动
Strongly Powered by AbleSci AI