高电子迁移率晶体管
材料科学
钻石
散热片
宽禁带半导体
结温
电子设备和系统的热管理
氮化镓
热的
大功率led的热管理
光电子学
功率密度
热流密度
热阻
核工程
晶体管
功率(物理)
传热
机械
电气工程
物理
纳米技术
机械工程
工程类
复合材料
热力学
电压
图层(电子)
作者
Yoonjin Won,Jungwan Cho,Damena Agonafer,Mehdi Asheghi,Kenneth E. Goodson
标识
DOI:10.1109/csics.2013.6659222
摘要
The peak power density of GaN HEMT technology is limited by a hierarchy of thermal resistances from the junction to the ambient. Here we explore the ultimate or fundamental cooling limits made possible by advanced thermal management technologies including GaN-diamond composites and nanoengineered heat sinks. Through continued attention to near-junction resistances and extreme flux convection, power densities that may exceed 50 kW/cm2 - depending on gate width and hotspot dimension - are feasible within 5 years.
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