铜
铝
材料科学
化学气相沉积
互连
半导体工业
图层(电子)
铜互连
冶金
金属
纳米技术
原子层沉积
半导体
化学工程
光电子学
工程类
制造工程
电信
出处
期刊:Journal de physique
[EDP Sciences]
日期:2001-08-01
卷期号:11 (PR3): Pr3-503
被引量:17
摘要
The evolution of copper CVD is reviewed from the early efforts in metal CVD to the copper precursors and CVD processes currently under development for copper metallization in the semiconductor industry where copper is rapidly supplanting aluminum as the high speed interconnect metal of choice. Processing techniques for achieving adhesion of CVD copper to diffusion barrier materials are discussed and precursors for atomic layer deposition (ALD) of copper are described. In addition, unique abatement technologies for copper CVD are outlined that minimize the release of volatile copper species into the environment and enable the recycle of CVD by-products back to fresh copper precursor.
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