CMOS芯片
放大器
电气工程
光电子学
电压
激光器
材料科学
物理
光学
工程类
作者
Shereen M. Galal,Behzad Razavi
出处
期刊:IEEE Journal of Solid-state Circuits
[Institute of Electrical and Electronics Engineers]
日期:2003-12-01
卷期号:38 (12): 2138-2146
被引量:320
标识
DOI:10.1109/jssc.2003.818567
摘要
A limiting amplifier incorporates active feedback, inductive peaking, and negative Miller capacitance to achieve a voltage gain of 50 dB, a bandwidth of 9.4 GHz, and a sensitivity of 4.6 mV/sub pp/ for a bit-error rate of 10/sup -12/ while consuming 150 mW. A driver employs T-coil peaking and negative impedance conversion to achieve operation at 10 Gb/s while delivering a current of 100 mA to 25-/spl Omega/ lasers or a voltage swing of 2 V/sub pp/ to 50-/spl Omega/ modulators with a power dissipation of 675 mW. Fabricated in 0.18-μm CMOS technology, both prototypes operate with a 1.8-V supply.
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