材料科学
光电子学
异质结
脉冲激光沉积
铁电性
外延
场效应晶体管
晶体管
薄膜
电压
纳米技术
电气工程
电介质
工程类
图层(电子)
作者
Matthias Brandt,Heiko Frenzel,Holger Hochmuth,Michael Lorenz,Marius Grundmann,Jürgen Schubert
出处
期刊:Journal of vacuum science & technology
[American Vacuum Society]
日期:2009-05-29
卷期号:27 (3): 1789-1789
被引量:27
摘要
The authors have grown epitaxial ZnO/BaTiO3 (BTO) heterostructures by pulsed laser deposition on lattice matched Nb-doped SrTiO3 substrates. Epitaxial growth of the BTO layers has been confirmed by x-ray diffraction. The electrical properties of ZnO/BTO heterostructures have been investigated by current-voltage and capacitance-voltage measurements, showing that the BTO layers are highly insulating (leakage current density jl<10−9 A/cm2 at 5 V). The structures were processed into field-effect transistors, and their output and transfer properties have been determined. A large memory effect of the source-drain current on the previously applied “programm” gate voltage (−7 or +20 V) has been observed. It is reproducible in repeated switching cycles, showing the suitability of the structure as a nonvolatile memory device.
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