热电效应
电子迁移率
材料科学
光电子学
电子工程
物理
热力学
工程类
作者
Yu Xiao,Liqing Xu,Tao Hong,Haonan Shi,Sining Wang,Xiang Gao,Xiangdong Ding,Jun Sun,Li‐Dong Zhao
摘要
Carrier mobility is a key parameter for thermoelectric performance. A high average ZT value of ∼1.13 can be achieved in n-type PbSe–18%SnS–0.5%Cu at 300–873 K through the rational optimization of carrier mobility.
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