Electrochemical reduction of thin graphene-oxide films in aqueous solutions – Restoration of conductivity

石墨烯 氧化物 电解质 电化学 材料科学 循环伏安法 电导率 导电体 纳米技术 导电原子力显微镜 化学工程 电极 化学 复合材料 原子力显微镜 物理化学 工程类 冶金
作者
Dalibor Karačić,Sanjin J. Gutić,Borislav Vasić,Vladimir M. Mirsky,Natalia V. Skorodumova,Slavko Mentus,Igor A. Pašti
出处
期刊:Electrochimica Acta [Elsevier]
卷期号:410: 140046-140046 被引量:6
标识
DOI:10.1016/j.electacta.2022.140046
摘要

Graphene oxide finds applications in different fields of science, including energy conversion. Electrochemical reduction of graphene oxide (GO) significantly improves its conductivity. However, the kinetics of this process depends on the solvent, supporting electrolyte, pH, and numerous other factors. Most studies report the macroscopic views and ex-situ properties of reduced GO. To expand the knowledge about GO reduction, in this study, we used cyclic voltammetry (CV), simultaneous 2 points and 4 points resistance measurement (s24), conductive atomic force microscopy (AFM), and theoretical calculations. Using CV, we demonstrated that the choice of supporting electrolyte (KCl or LiCl) influences the potential range in which electrochemical GO reduction occurs. The activation energy of this process was estimated to be below 30 kJ mol‒1 in both electrolytes, being significantly lower than that required for thermal reduction of GO. Simultaneous in situ s24 resistance measurements suggest that GO films reach a highly conductive state at deep negative potentials, with an abrupt, irreversible switch from non-conductive to the conductive state. However, conductive AFM presents a more exact picture of this process: the reduction of GO films starts locally while the formed conductive islands grow during the reduction. This mechanism was confirmed by theoretical calculations indicating that the reduction starts on isolated oxygen-functional groups over the GO basal plane, while clustered OH groups are more difficult to reduce. The presented results can help in tailoring reduced GO for a particular electrochemical application by precisely controlling the reduction degree and percentage of the conductive area of the reduced GO films.

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