荧光粉
材料科学
近红外光谱
紫外线
发光二极管
光电子学
光谱学
发光
辐射通量
二极管
光学
物理
量子力学
作者
Xufeng Zhou,Wanying Geng,Junyi Li,Yichao Wang,Jianyan Ding,Sheng Wang
标识
DOI:10.1002/adom.201902003
摘要
Abstract High‐radiance near‐infrared (NIR) phosphor‐converted light‐emitting diodes (pc‐LEDs) are demanded for wearable biosensing devices and the properties of these pc‐LEDs are highly dependent on the performance of the NIR phosphor. An ultraviolet–visible and NIR‐responded broadband NIR NaScGe 2 O 6 :Cr 3+ phosphor is reported. Under 490 nm excitation, NaScGe 2 O 6 :Cr 3+ shows broad emission band from 700 to 1250 nm, which covers the first and second NIR windows. An NIR pc‐LED with radiant flux of 12.07 mW@350 mA is realized based on NaScGe 2 O 6 :Cr 3+ and 450 nm blue LED chip. The ability of high‐power NIR light of the NIR pc‐LED to penetrate human tissues is observed successfully. Additionally, in NaScGe 2 O 6 :Cr 3+ , the luminescence performance of Cr 3+ under 808 nm laser excitation is achieved for the first time.
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