材料科学
铁电性
薄膜
极化(电化学)
X射线光电子能谱
粒度
分析化学(期刊)
纳米技术
化学工程
复合材料
光电子学
物理化学
有机化学
电介质
化学
工程类
作者
Baek Su Kim,Seung Dam Hyun,Taehwan Moon,Keum Do Kim,Young Hwan Lee,Hyeon Woo Park,Yong Bin Lee,Jangho Roh,Beom Yong Kim,Ho Hyun Kim,Min Hyuk Park,Cheol Seong Hwang
标识
DOI:10.1186/s11671-020-03301-4
摘要
Abstract The chemical, physical, and electrical properties of the atomic layer deposited Hf 0.5 Zr 0.5 O 2 thin films using tetrakis(ethylmethylamino) (TEMA) and tetrakis(dimethylamino) (TDMA) precursors are compared. The ligand of the metal-organic precursors strongly affects the residual C concentration, grain size, and the resulting ferroelectric properties. Depositing Hf 0.5 Zr 0.5 O 2 films with the TDMA precursors results in lower C concentration and slightly larger grain size. These findings are beneficial to grow more ferroelectric-phase-dominant film, which mitigates its wake-up effect. From the wake-up test of the TDMA-Hf 0.5 Zr 0.5 O 2 film with a 2.8 MV/cm cycling field, the adverse wake-up effect was well suppressed up to 10 5 cycles, with a reasonably high double remanent polarization value of ~40 μC/cm 2 . The film also showed reliable switching up to 10 9 cycles with the 2.5 MV/cm cycling field without involving the wake-up effect but with the typical fatigue behavior.
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