光电流
锗
暗电流
化学气相沉积
光学
制作
光电探测器
吸收(声学)
材料科学
光功率
物理
硅
光电子学
激光器
医学
替代医学
病理
作者
Xiuli Li,Linzhi Peng,Zhi Liu,Xiangquan Liu,Jun Zheng,Yuhua Zuo,Chunlai Xue,Buwen Cheng
出处
期刊:Optics Letters
[The Optical Society]
日期:2020-02-05
卷期号:45 (6): 1358-1358
被引量:28
摘要
A high-power germanium photodetector is designed and fabricated using a cold-wall ultrahigh vacuum chemical vapor deposition. A back-to-back dual-absorption structure improves high-power characteristics by reducing the space-charge effect. Compared to a typical p-i-n photodetector, the saturated photocurrent of the back-to-back dual-absorption photodetector is improved from 16.2 to 21.3 mA at $ - {3}\;{\rm V}$-3V. At a bias voltage of $ - {1}\;{\rm V}$-1V, the dark current is 1.31 µA. The optical responsivities are 0.31 and 0.52 A/W at 1550 and 1310 nm, respectively. The 3 dB bandwidth of 4.14 GHz is achieved at $ - {3}\;{\rm V}$-3V. Theoretically, the 3 dB bandwidth can be further optimized in future device fabrication.
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