三氧化钼
响应度
材料科学
光电子学
制作
带隙
平面的
化学气相沉积
纳米技术
紫外线
钼
计算机科学
光电探测器
病理
计算机图形学(图像)
冶金
医学
替代医学
作者
Aram Arash,Taimur Ahmed,Ananth Govind Rajan,Sumeet Walia,Fahmida Rahman,Aishani Mazumder,Rajesh Ramanathan,Sharath Sriram,Madhu Bhaskaran,Edwin Mayes,Michael S. Strano,Sivacarendran Balendhran
出处
期刊:2D materials
[IOP Publishing]
日期:2019-03-19
卷期号:6 (3): 035031-035031
被引量:52
标识
DOI:10.1088/2053-1583/ab1114
摘要
Two-dimensional (2D) molybdenum trioxide has been attracting research interest due to its bandgap tunability and a wide variety of desirable electronic/optoelectronic properties. However, the lack of a reproducible synthesis process for obtaining large coverage 2D MoO3 has limited the use of this material. Here we report the synthesis of large area 2D MoO3−x via physical vapor deposition, using MoO3 powder as the precursor. The as-grown layers are directly deposited on SiO2/Si, eliminating the necessity for any transfer process. These as-grown MoO3−x layers allow for the large-scale fabrication of planar device arrays. The applicability of 2D MoO3−x in optoelectronics is established via the demonstration of low-power ultraviolet (UV) sensor arrays, with rapid response times (200 µs) and responsivity up to 54.4 A · W−1. At a bias voltage of 0.1 V, they are at least 400 times more power efficient than their next best contender.
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