钝化
钙钛矿(结构)
光伏系统
材料科学
卤化物
带隙
半导体
晶体缺陷
纳米技术
工程物理
光电子学
化学工程
化学
电气工程
无机化学
物理
工程类
凝聚态物理
图层(电子)
作者
Luis K. Ono,Shengzhong Liu,Yabing Qi
标识
DOI:10.1002/anie.201905521
摘要
In several photovoltaic (PV) technologies, the presence of electronic defects within the semiconductor band gap limit the efficiency, reproducibility, as well as lifetime. Metal halide perovskites (MHPs) have drawn great attention because of their excellent photovoltaic properties that can be achieved even without a very strict film-growth control processing. Much has been done theoretically in describing the different point defects in MHPs. Herein, we discuss the experimental challenges in thoroughly characterizing the defects in MHPs such as, experimental assignment of the type of defects, defects densities, and the energy positions within the band gap induced by these defects. The second topic of this Review is passivation strategies. Based on a literature survey, the different types of defects that are important to consider and need to be minimized are examined. A complete fundamental understanding of defect nature in MHPs is needed to further improve their optoelectronic functionalities.
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