材料科学
碳化硅
硅
晶种
Crystal(编程语言)
坩埚(大地测量学)
温度梯度
碳纤维
石墨
腐蚀坑密度
各向同性腐蚀
晶体生长
播种
溶解
拉曼光谱
蚀刻(微加工)
分析化学(期刊)
结晶学
复合材料
单晶
化学工程
光电子学
光学
化学
图层(电子)
工程类
程序设计语言
计算化学
航空航天工程
物理
复合数
计算机科学
量子力学
色谱法
作者
Minh‐Tan Ha,Yun‐Ji Shin,Myung‐Hyun Lee,Cheol‐Jin Kim,Seong‐Min Jeong
标识
DOI:10.1002/pssa.201701017
摘要
The top seeded solution growth (TSSG) method is a promising technique for fabricating high‐quality silicon carbide (SiC) single crystals. The carbon required to grow SiC is provided by dissolving the graphite crucible in the silicon melt, and the carbon distribution in the silicon melt is governed by various factors. In this study, two hot zone structures are evaluated using the finite element analysis (FEA) simulation, especially for the temperature distribution, the velocity field, and the carbon concentration in the silicon melt. The results of the simulations revealed significant differences between the two hot zone structures in terms of temperature and carbon concentrations, especially near the interface between the crystal and the melt. SiC crystals are experimentally grown to verify the simulation results with the two hot zone structures. The grown crystals are evaluated to study their surface morphology, crystal quality, polytype stability, and dislocation density by using optical microscopy, high‐resolution X‐ray diffraction, micro‐Raman spectroscopy, and chemical etching, respectively. The simulations and experiments suggests that the hot zone structure with a small temperature gradient especially near the interface between the crystal and the melt promotes stable conditions for growing SiC crystals via the TSSG method.
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