Fabrication and characterization of TiO2/SiO2 based Bragg reflectors for light trapping applications

Distributed Bragg reflectors (DBRs) have received an intensive attention due to their increasing demand in optoelectronic and photonic devices. Such reflectors are capable to prohibit the light propagation within the specified wavelength range of interest. In this paper, we present the fabrication of TiO2/SiO2 stacks based Bragg reflectors by using a simple and in-expensive sol-gel spin coating technique. The prepared single-layer thin films of TiO2 and SiO2 onto glass substrates were characterized for their optical constants. By tuning the process parameters, one-seven DBR stacks of TiO2/SiO2 were prepared. The corresponding shift of the Bragg reflection peak was observed with the increased number of DBR stacks and as much as about 90% reflectance is observed from the 7DBR stacks. The experimentally measured reflectance was compared with the simulated one, which showed good in agreement. FESEM measurement has confirmed the formation of bright and dark strips of TiO2 and SiO2 films with their thicknesses 80 and 115 nm respectively. The simulation study was explored to a design of thin film silicon solar cell using 7DBR stacks. An enhancement in light absorption in the visible wavelength range is observed which coincides with the experimental result of the reflectance. The use of DBR at the bottom of the solar cell could felicitate the better light harvesting with the occurrence of Fabry-Perot resonances in the absorbing layer.