光致发光
材料科学
激光阈值
半导体
范德瓦尔斯力
光电子学
钙钛矿(结构)
光伏
纳米技术
光伏系统
化学
结晶学
生物
有机化学
分子
生态学
波长
作者
Chunxiao Cong,Jingzhi Shang,Lin Niu,Lishu Wu,Yu Chen,Chenji Zou,Shun Feng,Zhijun Qiu,Laigui Hu,Pengfei Tian,Zheng Liu,Ting Yu,Ran Liu
标识
DOI:10.1002/adom.201700609
摘要
Abstract Recently, organic–inorganic lead iodide perovskite has become one of the most promising emergent materials, which exhibits great potential in photovoltaics, lasing, laser cooling, etc. The building block of such great material is PbI 2 , a van der Waals (vdW) layered semiconductor material, which arouses increased interest also owing to its potential applications for X‐ray and γ‐ray detection, lasing, etc. Similar and even superior to some vdW layered materials such as thin layers of transition metal dichalcogenides like MoS 2 , WS 2 , MoSe 2 , or WSe 2 , PbI 2 layers possess a direct bandgap of visible frequency with a wide range of thicknesses (>3 layers). This study reports the anti‐Stokes photoluminescence (ASPL) of PbI 2 layers, which is very rarely investigated at present. Universe and robust ASPL in both 4H‐ and 2H‐PbI 2 layers are observed and a phonon‐assisted and multiphoton absorption up‐conversion mechanisms are proposed through in situ temperature‐dependent, incident laser‐power‐dependent measurements of both Stokes photoluminescence and ASPL. The successful observation and explanation of the universal anti‐Stokes emission of PbI 2 layers, will certainly enrich fundamental understandings of vdW layered semiconductors and perovskite, then further benefit to developing applications based on such emerging materials.
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