Characterization of deuteriated titanium thin film by residual gas analyzer

Titanium thin film was prepared on copper substrate by thermal evaporation method. Gettering property of titanium film for deuterium was studied for different values of temperature, pressure and time. The studies were carried out in an ultra high vacuum system. The substrate was mounted in the vacuum system on a heater whose temperature was controlled by PID controller. The titanium thin film was activated for 1 h at a temperature of 500 °C under vacuum. After activation, during cool down, the vacuum chamber was pressurized at various pressure values of deuterium and left for absorption for various time periods. Comparative studies of the amount of deuterium desorption for various charging pressure and exposure time were studied with the help of residual gas analyzer. Attempts were made to qualify the process of deuteration of the titanium film. The results of these studies are presented in this article.