材料科学
光电探测器
光电流
光电子学
波长
紫外线
红外线的
异质结
衰减系数
吸收(声学)
光电导性
光学
物理
复合材料
作者
Can Fu,Yu‐Tian Xiao,Yue Xing,Xiao‐Wei Tong,Jiang Wang,Zhixiang Zhang,Li Wang,Di Wu,Lin‐Bao Luo
标识
DOI:10.1021/acsami.1c12885
摘要
In this study, we present a wavelength sensor that is capable of distinguishing the spectrum in the range from ultraviolet (UV) to near-infrared (NIR) light. The filterless device is composed of two horizontally stacking PdSe2/20 μm Si/PdSe2 heterojunction photodetectors with a photovoltaic (PV) behavior, which makes it possible for the device to work at 0 bias voltage. Due to the relatively small thickness of Si and the wavelength-dependent absorption coefficient, the two PdSe2/20 μm Si/PdSe2 photodetectors according to theoretical simulation display a sharp contrast in distribution of the photoabsorption rate. As a result, the photocurrents of both photodetectors evolve in completely different ways with increasing wavelengths, leading to a monotonic decrease in the photocurrent ratio from 6800 to 22 when the wavelength gradually increases from 265 to 1050 nm. The corresponding relationship between both the photocurrent ratio and wavelength can be easily described by the monotonic function, which can help to precisely determine the wavelength in the range from 265 to 1050 nm, with an average relative error less than ±1.6%. It is also revealed that by slightly revising the monotonic function, the wavelength in other different temperatures can also be estimated.
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