光伏系统
异质结
材料科学
光电子学
物联网
剥脱关节
响应时间
电气工程
纳米技术
计算机科学
嵌入式系统
工程类
石墨烯
计算机图形学(图像)
作者
Yue Niu,Junwei Zeng,Xiangcheng Liu,Jialong Li,Quan Wang,Hao Li,Nicolaas Frans de Rooij,Yao Wang,Guofu Zhou
标识
DOI:10.1002/advs.202100472
摘要
Abstract Traditional gas sensors are facing the challenge of low power consumption for future application in smart phones and wireless sensor platforms. To solve this problem, self‐powered gas sensors are rapidly developed in recent years. However, all reported self‐powered gas sensors are suffering from high limit of detection (LOD) toward NO 2 gas. In this work, a photovoltaic self‐powered NO 2 gas sensor based on n‐MoS 2 /p‐GaSe heterojunction is successfully prepared by mechanical exfoliation and all‐dry transfer method. Under 405 nm visible light illumination, the fabricated photovoltaic self‐powered gas sensors show a significant response toward ppb‐level NO 2 with short response and recovery time and high selectivity at room temperature (25 °C). It is worth mentioning that the LOD toward NO 2 of this device is 20 ppb, which is the lowest of the reported self‐powered room‐temperature gas sensors so far. The discussed devices can be used as building blocks to fabricate more functional Internet of things devices.
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