X射线光电子能谱
材料科学
光电发射光谱学
分析化学(期刊)
半导体
电子结构
外延
带隙
化学
纳米技术
光电子学
核磁共振
计算化学
物理
色谱法
图层(电子)
作者
Hayder A. Al-Atabi,Xiaotian Zhang,Shanmei He,Cheng chen,Y. L. Chen,Eli Rotenberg,James H. Edgar
摘要
Scandium nitride (ScN) has recently attracted much attention for its potential applications in thermoelectric energy conversion, as a semiconductor in epitaxial metal/semiconductor superlattices, as a substrate for GaN growth, and alloying it with AlN for 5G technology. This study was undertaken to better understand its stoichiometry and electronic structure. ScN (100) single crystals 2 mm thick were grown on a single crystal tungsten (100) substrate by a physical vapor transport method over a temperature range of 1900–2000 °C and a pressure of 20 Torr. The core level spectra of Sc 2p3/2,1/2 and N 1s were obtained by x-ray photoelectron spectroscopy (XPS). The XPS core levels were shifted by 1.1 eV toward higher values as the [Sc]:[N] ratio varied from 1.4 at 1900 °C to ∼1.0 at 2000 °C due to the higher binding energies in stoichiometric ScN. Angle-resolved photoemission spectroscopy measurements confirmed that ScN has an indirect bandgap of ∼1.2 eV.
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