量子点
数码产品
光电子学
半导体
费米能级
偏移量(计算机科学)
材料科学
物理
凝聚态物理
计算物理学
化学
量子力学
电子
计算机科学
程序设计语言
物理化学
作者
Qi Shen,Xiaojuan Sun,Xingtong Chen,Rui Li,Xinrui Li,Song Chen
标识
DOI:10.1016/j.device.2023.100061
摘要
For colloidal quantum dot (CQD) electronics, the physics of hole injection across organic/CQD heterointerfaces (OQHs) plays a fundamental role in determining device performance. Classical semiconductor theories have failed to predict device characteristics accurately, and it is essential to develop a model that prioritizes the OQH’s localized and distributed electronic states. Using an iterative electrostatic model and ultraviolet photoelectron spectroscopy, we find that the interface energy-level offset is less than previously thought due to disorder-driven charge transfer. Combining density-of-states (DOS) distributions with hopping dynamics, we find that holes predominantly hop from the organics’ DOS maximum to the CQDs’ tail states, which challenges the conventional assumption of charges hopping from the Fermi level. The electrostatic and dynamic effects combine a barrier reduction of over 0.35 eV. Our model’s predicted current-field characteristics match well with those measured from hole-only devices and help to provide a universal explanation for hole injection in CQD-based electronic devices.
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