激光阈值
材料科学
光电子学
激光器
钙钛矿(结构)
光子学
光学
高折射率聚合物
小型化
折射率
纳米技术
波长
物理
化学工程
工程类
作者
Sihao Huang,Zixi Shen,Yang Liao,Zhengzheng Liu,Zhiping Hu,Qian Li,Zeyu Zhang,Siyu Dong,Jiajun Luo,Juan Du,Jiang Tang,Yuxin Leng
标识
DOI:10.1002/adma.202306102
摘要
Abstract Great research efforts are devoted to exploring the miniaturization of chip‐scale coherent light sources possessing excellent lasing performance. Despite the indispensable role in Si photonics, SiO 2 is generally considered not contributing to the starting up and operation of integrated lasers. Here, this work demonstrates an extraordinary‐performance subwavelength‐scale perovskite vertical cavity laser with all‐transparent SiO 2 cavity, whose cavity is ultra‐simple and composed of only two parallel SiO 2 plates. By introducing a ligand‐assisted thermally co‐evaporation strategy, highly luminescent perovskite film with high reproducibility and excellent optical gain is grown directly on SiO 2 . Benefitting from their high‐refractive‐index contrast, low‐threshold, high‐quality factor, and single‐mode lasing is achieved in subwavelength range of ≈120 nm, and verified by long‐range coherence distance (115.6 µm) and high linear polarization degree (82%). More importantly, the subwavelength perovskite laser device could operate in water for 20 days without any observable degradation, exhibiting ultra‐stable water‐resistant performance. These findings would provide a simple but robust and reliable strategy for the miniaturized on‐chip lasers compatible with Si photonics.
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