捷克先令
锌黄锡矿
碲化镉光电
材料科学
能量转换效率
硒化铜铟镓太阳电池
薄膜
太阳能电池
硫族元素
薄膜太阳能电池
纳米技术
替代(逻辑)
光伏
光电子学
结晶学
光伏系统
化学
计算机科学
电气工程
程序设计语言
工程类
作者
Manoj Kangsabanik,R.N. Gayen
出处
期刊:Solar RRL
[Wiley]
日期:2023-10-20
卷期号:7 (24)
被引量:20
标识
DOI:10.1002/solr.202300670
摘要
Kesterite Cu 2 ZnSnS 4 (CZTS) and selenized CZTS (CZTSSe) are the most potential replacements of Cu(In x Ga 1− x )Se 2 as absorber layers in thin‐film solar cells, aligning with modern green energy policies. In spite of a reported power conversion efficiency ( η ) of nearly 14.9%, their efficiency still lags much behind their predecessors like cadmium telluride and CIGS. Major obstacles hindering the performance of CZTS‐based thin‐film solar cells pertain to the formation of Cu Zn and Zn Cu antisite defects, along with high density of 2Cu Zn + Sn Zn donor defects, which adversely affects open‐circuit voltage and η . To combat these challenges, researchers have explored cation substitution by incorporating alternative isovalent atoms, such as substituting Ag/Li for Cu, Mn/Cd for Zn, and Ge/Ti for Sn, as a potent strategy to inhibit severe potential fluctuations and undesirable tail states caused by Cu–Zn disorder and Sn‐related defects. Recently single‐cation substitution in CZTS (or CZTSSe) has garnered considerable attention, while dual‐cation incorporation has emerged as an intriguing avenue to enhance device performance, although in its nascent stage of research and development. This review discusses recent progress on cation substitution to suppress antisite defects in CZTS (or CZTSSe), leading to high‐efficiency thin‐film solar cells.
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