材料科学
基面
位错
氢氧化钾
蚀刻(微加工)
复合材料
播种
平面(几何)
结晶学
分析化学(期刊)
化学工程
热力学
几何学
物理
工程类
色谱法
化学
图层(电子)
数学
作者
Johannes Steiner,Binh Duong Nguyen,Stefan Sandfeld,Peter J. Wellmann
出处
期刊:Solid State Phenomena
日期:2023-05-30
卷期号:343: 9-14
被引量:1
摘要
To prevent arrays of basal plane dislocations (BPD) forming during grown 4H-SiC single crystals, the growth cell in physical vapor transport (PVT) growth was modified by adapting the temperature gradients, the seed attachment method and the seeding phase. The resulting reduction in stress was modeled numerically and the crystals were investigated by X-ray topography (XRT) and molten potassium hydroxide (KOH) etching. Due to these modifications, the formation of BPD arrays was completely suppressed.
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