单层
扫描隧道显微镜
材料科学
X射线光电子能谱
异质结
化学物理
纳米技术
费米能级
原位
过渡金属
表征(材料科学)
光电子学
凝聚态物理
化学
电子
物理
核磁共振
有机化学
生物化学
量子力学
催化作用
作者
Jichuang Shen,Xiaopeng Xie,Wei Li,Chaoyue Deng,Yaqing Ma,Han Chen,Huixia Fu,Fangsen Li,Bingkai Yuan,Chen Ji,Ruihua He,Jiaqi Guan,Wei Kong
出处
期刊:Science Advances
[American Association for the Advancement of Science]
日期:2025-03-28
卷期号:11 (13)
标识
DOI:10.1126/sciadv.adr9753
摘要
Recent advancements in quantum materials research have focused on monolayer transition metal dichalcogenides and their heterostructures, known for complex electronic phenomena. While macroscopic electrical and magnetic measurements provide valuable insights, understanding these electronic states requires direct experimental observations. Yet, the extreme two-dimensionality of these materials demands surface-sensitive measurements with exceptionally clean surfaces. Here, we present the metal-assisted vacuum transfer method combined with in situ measurements in ultrahigh vacuum (UHV), enabling pristine monolayer MoS 2 with ultraclean surfaces unexposed to ambient conditions. Consequently, in situ scanning tunneling microscopy revealed charge density waves (CDWs) in MoS 2 /Cu(111), previously unobserved in monolayer MoS 2 . Additionally, angle-resolved photoelectron spectroscopy identified notable Fermi surface nesting due to substrate interactions, elucidating the mechanisms behind CDW formation. This method is broadly applicable to other monolayer two-dimensional materials, enabling the high-fidelity in situ UHV characterization and advancing the understanding of correlated electronic behaviors in these material systems.
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