锡
凝聚态物理
超导电性
材料科学
外延
电阻式触摸屏
转变温度
超导转变温度
氮化钛
薄膜
氮化物
纳米技术
物理
图层(电子)
工程类
电气工程
冶金
作者
E. M. Baeva,A. I. Kolbatova,N. A. Titova,Soham Saha,Alexandra Boltasseva,Simeon Bogdanov,Vladimir M. Shalaev,A. Semenov,Gregory Goltsman,V. S. Khrapai
标识
DOI:10.1088/1361-6668/ad74a1
摘要
Abstract We investigate the effect of various fluctuation mechanisms on the dc resistance in superconducting devices based on epitaxial titanium nitride (TiN) films. The samples we studied show a relatively steep resistive transition (RT), with a transition width δT/T c ~ 0.002-0.025, depending on the film thickness (20 nm, 9 nm, and 5 nm) and device dimensions. This value is significantly broader than expected due to conventional superconducting fluctuations ( δT/T c < 10 -3 ). The shape and width of the RT can be perfectly described by the well-known effective medium theory, which allows us to understand the origin of the inhomogeneity in the superconducting properties of TiN films. We propose that this inhomogeneity can have both dynamic and static origins. The dynamic mechanism is associated with spontaneous fluctuations in electron temperature (T-fluctuations), while the static mechanism is due to a random spatial distribution of surface magnetic disorder (MD). Our analysis has revealed clear correlations between the transition width and material parameters as well as device size for both proposed mechanisms. While T-fluctuations may contribute significantly to the observed transition width, our findings suggest that the dominant contribution comes from the MD mechanism. Our results provide new insights into the microscopic origin of broadening of the superconducting transition and inhomogeneity in thin superconducting films.
科研通智能强力驱动
Strongly Powered by AbleSci AI